In this paper, a pentacene photo organic thin-film transistor
(photoOTFT) was fabricated and characterized. The gate dielectric acted
as a sensing layer thanks to it strongly absorbs UV light. Electrical
behaviors of photoOTFT were measured under 365 nm UV illumination from
the gate electrode side. The current in transistor channel was
significantly enhanced by photoelectrons at interface of buffer/gate
dielectric. Photosensitivity increased with the light intensity but
decreased with the applied gate voltage. Meanwhile the photoresponsivity
decreased with the light intensity and increased with the applied gate
voltage. The transistor responses well with the pulse of light with many
cycles of light-on and light-off were tested. The best
photosensitivity, photoresponsivity, rising time and falling time
parameters of the device were found to be about 104, 0.12 A/W, and 0.2
s, respectively. The obtained photoelectrical results suggest that the
photoOTFT can be a good candidate for practical uses in low-cost UV
optoelectronics.
| Title: | Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors |
| Authors: | Dao, Thanh Toan |
| Keywords: | Pentacene phototransistor;UV sensor;organic electronics;optoelectronics |
| Issue Date: | 2017 |
| Publisher: | H. : ĐHQGHN |
| Series/Report no.: | Vol. 33;No. 2 (2017) 74-81 |
| Abstract: | In
this paper, a pentacene photo organic thin-film transistor (photoOTFT)
was fabricated and characterized. The gate dielectric acted as a sensing
layer thanks to it strongly absorbs UV light. Electrical behaviors of
photoOTFT were measured under 365 nm UV illumination from the gate
electrode side. The current in transistor channel was significantly
enhanced by photoelectrons at interface of buffer/gate dielectric.
Photosensitivity increased with the light intensity but decreased with
the applied gate voltage. Meanwhile the photoresponsivity decreased with
the light intensity and increased with the applied gate voltage. The
transistor responses well with the pulse of light with many cycles of
light-on and light-off were tested. The best photosensitivity,
photoresponsivity, rising time and falling time parameters of the device
were found to be about 104, 0.12 A/W, and 0.2 s, respectively. The
obtained photoelectrical results suggest that the photoOTFT can be a
good candidate for practical uses in low-cost UV optoelectronics. |
| Description: | p. 74-81 |
| URI: | http://repository.vnu.edu.vn/handle/VNU_123/55369 |
| ISSN: | 2588-1124 |
| Appears in Collections: | Mathematics and Physics |
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